Ga0.5In0.5P/GaAs interfaces by organometallic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339992
Reference9 articles.
1. First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
2. Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
3. Investigation by Raman scattering of the properties of III‐V compound semiconductors at high temperature
4. Clustering Parameter and Internal Stress in III-V Ternary Alloys
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2. Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method;Journal of Materials Science: Materials in Electronics;2008-01-23
3. Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices;Journal of Electronic Materials;2006-04
4. Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy;Physica B: Condensed Matter;2001-12
5. Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1998-11-01
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