Se‐related deep levels in InGaAlP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337393
Reference16 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Donor Levels in Si-Doped AlGaAs Grown by MBE
3. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
4. Temperature dependence of the I–V characteristics of modulation-doped FETs
5. Illumination stimulated persistent channel depletion at selectively doped Al0.3Ga0.7As/GaAs interface
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