Illumination stimulated persistent channel depletion at selectively doped Al0.3Ga0.7As/GaAs interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94750
Reference5 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
3. Transport Properties of Electrons in Inverted Silicon Surfaces
4. Backside‐gated modulation‐doped GaAs‐(AlGa)As heterojunction interface
5. Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
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1. Mechanism for recoverable power drift in PHEMTs;IEEE Transactions on Electron Devices;2000-03
2. Electron relaxation times in high-carrier-density GaAs-(Ga,Al)As heterojunctions;Physical Review B;1992-10-15
3. A novel mechanism for parallel conduction in GaAs-(Ga,Al)As heterojunctions;Semiconductor Science and Technology;1992-07-01
4. Relaxation of stored charge carriers in aZn0.3Cd0.7Se mixed crystal;Physical Review B;1990-03-15
5. Selection criteria for AlGaAs‐GaAs heterostructures in view of their use as a quantum Hall resistance standard;Journal of Applied Physics;1989-05
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