Backside‐gated modulation‐doped GaAs‐(AlGa)As heterojunction interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92771
Reference9 articles.
1. Calculation of Stacking Fault Energy by Use of Long-Range Interionic Potential. I. Application of Ewald Method
2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
3. Two-dimensional electron gas m.e.s.f.e.t. structure
4. Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs
5. Two-dimensional electron gas at a semiconductor-semiconductor interface
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1. Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer;Applied Physics Letters;2008-04-14
2. The effect of electrons and phonons scattering from interface roughness and well-width fluctuations on low-field mobility of 2DEG in GaN/AlGaN;Physica E: Low-dimensional Systems and Nanostructures;2004-06
3. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN;Semiconductor Science and Technology;2004-01-13
4. Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructure;physica status solidi (a);2003-12
5. Back gating of a two-dimensional hole gas in a SiGe quantum well;Applied Physics Letters;1997-04-07
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