The effect of electrons and phonons scattering from interface roughness and well-width fluctuations on low-field mobility of 2DEG in GaN/AlGaN
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference44 articles.
1. Electron mobility in modulation-doped AlGaN–GaN heterostructures
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5. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
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1. Spin relaxation induced by interfacial effects in GaN/Al0.25Ga0.75N heterostructures;Fundamental Research;2021-11
2. Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer;Solid-State Electronics;2016-04
3. Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures;Journal of Applied Physics;2013-08-07
4. Thermoelectric power factor enhancement of AZO/In-AZO quantum well multilayer structures as compared to bulk films;Journal of Alloys and Compounds;2012-10
5. Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors;Journal of Electronic Materials;2012-05-31
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