Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructure
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An inclusive theory of the hall mobility of a non-ohmic degenerate ensemble of two-dimensional electrons in a modulation-doped AlGaN/GaN heterostructure at low lattice temperature;AIP Conference Proceedings;2024
2. A comprehensive study on the Hall mobility of an ohmic ensemble of two-dimensional electrons confined in a quantum well of a heterostructure at low lattice temperatures;Canadian Journal of Physics;2023-06-01
3. A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures;Semiconductor Science and Technology;2021-10-20
4. Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure;AIP Advances;2021-04-01
5. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor;Acta Physica Sinica;2020
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