Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2912034
Reference16 articles.
1. Electronic transport characteristics in a one-dimensional constriction defined by a triple-gate structure
2. Backside‐gated modulation‐doped GaAs‐(AlGa)As heterojunction interface
3. High‐mobility variable‐density two‐dimensional electron gas in inverted GaAs‐AlGaAs heterojunctions
4. Independent contacting to electron layers in a double quantum well system using Pd‐Ge shallow ohmic contacts
5. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
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