High‐mobility variable‐density two‐dimensional electron gas in inverted GaAs‐AlGaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99176
Reference9 articles.
1. High mobilities in AlxGa1−xAs‐GaAs heterojuntions
2. Defects in electron‐irradiated, gallium‐doped silicon
3. A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)
4. Doping effects in AlGaAs
5. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
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