Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92604
Reference21 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Two-dimensional electron gas at a semiconductor-semiconductor interface
3. Observation of two‐dimensional electrons in LPE‐grown GaAs‐AlxGa1−xAs heterojunctions
4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
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