Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4946828
Reference33 articles.
1. High-excitation and high-resolution photoluminescence spectra of bulk AlN
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport
4. Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals
5. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
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