Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2909957
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1. Deactivation of Phosphorus by Carbon in Recrystallized Silicon;ECS Journal of Solid State Science and Technology;2019
2. Time evolution of boron deactivation with carbon coimplantation in preamorphized silicon;Japanese Journal of Applied Physics;2018-07-09
3. Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers;Japanese Journal of Applied Physics;2016-02-22
4. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements;Japanese Journal of Applied Physics;2016-01-05
5. Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures;Japanese Journal of Applied Physics;2014-06-24
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