Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements-Reference-Cited by-同舟云学术

Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Published:2016-01-05 Issue:2 Volume:55 Page:026501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Yasuo,Takamizawa Hisashi,Inoue Koji,Yano Fumiko,Kudo Shuichi,Nishida Akio,Toyama Takeshi,Nagai Yasuyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Mechanisms of boron diffusion in silicon and germanium

2. Impurity diffusion via an intermediate species: The B-Si system

3. Point defects and dopant diffusion in silicon

4. Suppression of boron deactivation and diffusion in preamorphized silicon after nonmelt laser annealing by carbon co-implantation

5. Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

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