Point defects and dopant diffusion in silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/RevModPhys.61.289/fulltext
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1. Etch Pits Observed in Dislocation-Free Silicon Crystals
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3. Enhanced Sb diffusion in Si under thermal Si3N4films during annealing in Ar
4. Film stress‐related vacancy supersaturation in silicon under low‐pressure chemical vapor deposited silicon nitride films
5. A Staining Technique for the Study of Two‐Dimensional Dopant Diffusion in Silicon
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