Mechanisms of boron diffusion in silicon and germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4763353
Reference120 articles.
1. Impurity diffusion via an intermediate species: The B-Si system
2. Mechanism of Boron Diffusion in Silicon: AnAb Initioand Kinetic Monte Carlo Study
3. First-Principles Study of Boron Diffusion in Silicon
4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
5. Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions
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