Ultra-shallow junctions produced by plasma doping and flash lamp annealing-Reference-Cited by-同舟云学术

Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Published:2004-12 Issue: Volume:114-115 Page:358-361
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Skorupa Wolfgang,Yankov Rossen A.,Anwand Wolfgang,Voelskow Matthias,Gebel Thoralf,Downey Daniel F.,Arevalo Edwin A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. International Technology Roadmap for Semiconductors 2002 Update, Semiconductor Industry Association, 4300 Stevens Creek Blvd, San Jose, CA 95129 (http://public.otrs/net).

2. 10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

3. Plasma doping for shallow junctions

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