In situ characterization of residual stress evolution during heat treatment of SiC/SiC ceramic matrix composites using high‐energy X‐ray diffraction

Author:

Knauf Michael W.1ORCID,Przybyla Craig P.2,Shade Paul A.2ORCID,Park Jun‐Sang3,Ritchey Andrew J.4,Trice Rodney W.5,Pipes R. B.6

Affiliation:

1. School of Aeronautics and Astronautics Purdue University West Lafayette IN USA

2. Materials and Manufacturing Directorate Air Force Research LaboratoryWright‐Patterson Air Force Base OH USA

3. Advanced Photon Source Argonne National Laboratory Lemont IL USA

4. Rolls‐Royce Corporation Indianapolis IN USA

5. School of Materials Engineering Purdue University West Lafayette IN USA

6. Schools of Aeronautics and Astronautics Materials Engineering and Chemical Engineering Purdue University West Lafayette IN USA

Funder

Argonne National Laboratory

U.S. Air Force

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Reference42 articles.

1. Microstress in Reaction-Bonded SiC from Crystallization Expansion of Silicon

2. Relaxation of residual microstress in reaction bonded silicon carbide

3. ZhangX ZhangT WongM ZoharY.Effects of high‐temperature rapid thermal annealing on the residual stress of LPCVD‐polysilicon thin films. Proceedings of the Tenth Annual Workshop on Micro Electro Mechanical Systems IEEE; 1997 Jan 26–30; Nagoya Japan. IEEE.1997:535–40.

4. Residual stress determination of silicon containing boron dopants in ceramic matrix composites

5. Stress and doping uniformity of laser crystallized amorphous silicon in thin film silicon solar cells

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