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Plasma doping for shallow junctions

Published:1999 Issue:5 Volume:17 Page:2290
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Goeckner M. J.,Felch S. B.,Fang Z.,Lenoble D.,Galvier J.,Grouillet A.,Yeap G. C.-F.,Bang D.,Lin M.-R.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Collapsing Behaviors of Plasma Sheath Driven by Voltage Pulse With Variable Width and Fall Time;IEEE Transactions on Plasma Science;2022-09

2. Ultra-Shallow Doping of GaAs with Mg, Cr, Mn and B Using Plasma Stimulated Room-Temperature Diffusion;Journal of Nanoscience and Nanotechnology;2020-03-01

3. Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs;Applied Physics A;2019-03

4. Doping Processes for MEMS;MEMS Reference Shelf;2011

5. The History and the Future Trend of the Semiconductor Devices;The Journal of The Institute of Electrical Engineers of Japan;2008

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