10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing-Reference-Cited by-同舟云学术

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10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2394-2398
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ito Takayuki,Iinuma Toshihiko,Murakoshi Atsushi,Akutsu Haruko,Suguro Kyoichi,Arikado Tsunetoshi,Okumura Katsuya,Yoshioka Masaki,Owada Tatsushi,Imaoka Yasuhiro,Murayama Hiromi,Kusuda Tatsuhumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2394/pdf

Cited by 62 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Where is the annealing technology going for better device performance?;MRS Advances;2022-12-22

2. Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs;Applied Physics Express;2021-08-16

3. Analyses of three-dimensional atomic arrangements of impurities doped in Si relating to electrical activity by spectro-photoelectron holography;Japanese Journal of Applied Physics;2020-01-01

4. Semiconductor Applications;Flash Lamp Annealing;2019

5. Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel;Japanese Journal of Applied Physics;2018-02-28

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