Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=7/a=071302/pdf
Reference29 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. Role of C and B clusters in transient diffusion of B in silicon
3. Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantation
4. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
5. Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study;Journal of Applied Physics;2018-10-21
2. Effect of carbon situating at end-of-range defects on silicon self-diffusion investigated using pre-amorphized isotope multilayers;Japanese Journal of Applied Physics;2016-02-22
3. Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements;Japanese Journal of Applied Physics;2016-01-05
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