Reducing ultra-shallow boron diffusion using carbon and fluorine co-implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Boron diffusion in silicon: the anomalies and control by point defect engineering
2. Depth dependence of {311} defect dissolution
3. Mechanism of Boron Diffusion in Silicon: AnAb Initioand Kinetic Monte Carlo Study
4. Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing
5. Effect of fluorine on the diffusion of boron in ion implanted Si
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1. Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor;Crystals;2021-09-11
2. State of the Art and Future Perspectives in Advanced CMOS Technology;Nanomaterials;2020-08-07
3. Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation;AIP Advances;2020-06-01
4. 3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon;Applied Physics Letters;2019-09-23
5. Formation of Ultra-Shallow Junctions;Reference Module in Materials Science and Materials Engineering;2016
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