3D atomic-scale investigation of carbon segregation in phosphorus co-implanted silicon
Author:
Affiliation:
1. STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France
2. Université de Rouen, GPM, UMR CNRS 6634 BP 12, Avenue de l'Université 76801 Saint-Étienne-du-Rouvray, France
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121629
Reference28 articles.
1. SiGe Heterojunction Bipolar Transistors
2. The impact of the substrate preamorphisation on the electrical performances of p+/n silicon junction diodes
3. Enhanced Diffusion in Silicon Processing
4. Transient enhanced diffusion of boron in Si
5. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
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