Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling-Reference-Cited by-同舟云学术

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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Published:2021-05-21 Issue:19 Volume:129 Page:195706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dumas P.¹²^ORCID,Julliard P.-L.¹,Borrel J.¹^ORCID,Duguay S.²^ORCID,Hilario F.¹^ORCID,Deprat F.¹,Lu V.³,Zhao W.³,Zou W³,Arevalo E.³,Blavette D.²

Affiliation:

1. STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles Cedex, France

2. Université de Rouen, GPM, UMR CNRS 6634 BP 12, Avenue de l’Université, 76801 Saint-Étienne-du-Rouvray, France

3. Applied Materials Gloucester, 35 Dory Road, Gloucester, Massachusetts 01930, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0049782

Reference28 articles.

1. Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization

2. Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

3. High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation

4. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality;Microelectronics Reliability;2022-12

2. Uphill phosphorus diffusion in carbon co-implanted silicon;Journal of Applied Physics;2022-03-21

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