High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3025849
Reference7 articles.
1. Solid Solubilities of Impurity Elements in Germanium and Silicon*
2. C. O. Chui and K. C. Saraswat, Germanium-Based Technologies; From Materials to Devices (Elsevier Science, Amsterdam, 2007), p. 173.
3. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
4. Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate
5. Low‐temperature dopant activation and its application to polycrystalline silicon thin film transistors
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization;Japanese Journal of Applied Physics;2024-01-05
2. Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films;Crystal Growth & Design;2021-10-19
3. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling;Journal of Applied Physics;2021-05-21
4. Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation;Electronics;2020-03-29
5. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor;Applied Physics Express;2017-08-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3