Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films-Reference-Cited by-同舟云学术

Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films

Published:2021-10-19 Issue:11 Volume:21 Page:6523-6528
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Saputro Rahmat Hadi¹²^ORCID,Matsumura Ryo¹,Fukata Naoki¹²^ORCID

Affiliation:

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Murata Science Foundation

Japan Society for the Promotion of Science

Iketani Science and Technology Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00966

Reference35 articles.

1. Moore's law: the future of Si microelectronics

2. Academic and industry research progress in germanium nanodevices

3. FinFET Evolution Toward Stacked-Nanowire FET for CMOS Technology Scaling

4. Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires

5. Controlling Catalyst-Free Formation and Hole Gas Accumulation by Fabricating Si/Ge Core–Shell and Si/Ge/Si Core−Double Shell Nanowires

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