Hole gas accumulation in Si/Ge core–shell and Si/Ge/Si core–double shell nanowires
Author:
Affiliation:
1. International Center for Materials Nanoarchitectonics
2. National Institute for Materials Science
3. Tsukuba
4. Japan
5. Institute of Applied Physics
6. International Center for Young Scientists
Abstract
p-Si/i-Ge core–shell and p-Si/i-Ge/p-Si core–double shell nanowires are fabricated using CVD with vapor–liquid–solid growth methods. Selective doping and sharp interfaces between the Si core and the Ge shell are achieved, which can provide a feasible design for realizing high electron (hole) mobility transistors.
Funder
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR05590D
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