Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals-Reference-Cited by-同舟云学术

Interplay of Quantum Confinement and Strain Effects in Type I to Type II Transition in GeSi Core–Shell Nanocrystals

Published:2023-01-05 Issue:2 Volume:127 Page:1209-1219
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Marri Ivan¹²³^ORCID,Grillo Simone⁴,Amato Michele⁵^ORCID,Ossicini Stefano¹³⁶,Pulci Olivia⁴^ORCID

Affiliation:

1. Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, 42122 Reggio Emilia, Italy

2. Interdepartmental Center for Research and Services in the Field of Hydrogen Production, Storage and Use H2 − MO.RE, Via Università 4, 41121 Modena, Italy

3. Centro Interdipartimentale En&Tech, 42122 Reggio Emilia, Italy

4. Department of Physics, University of Rome Tor Vergata, and INFN, Via della Ricerca Scientifica 1, I-00133 Rome, Italy

5. Université Paris-Saclay, CNRS, Laboratoire de Physique des Solides, 91405 Orsay, France

6. Centro S3, Institute of Nanoscience ─ Italian National Research Council (CNR-NANO), via Campi 213/A, 41125 Modena, Italy

Funder

Agence Nationale de la Recherche

Universit? Degli Studi di Modena e Reggio Emila

H2020 Marie Sklodowska-Curie Actions

Istituto Nazionale di Fisica Nucleare

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c07024

Reference84 articles.

1. Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

2. Optical gain in silicon nanocrystals

3. Electron affinities and ionization energies in Si and Ge nanocrystals

4. Quantum-confinement effect in individual Ge1−xSnx quantum dots on Si(111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy

5. Optoelectronic properties in quantum-confined germanium dots