Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate-Reference-Cited by-同舟云学术

Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate

Published:2008-09-15 Issue:6 Volume:104 Page:064501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Park Jin-Hong,Tada Munehiro,Kapur Pawan,Peng Hailin,Saraswat Krishna C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2978367

Reference11 articles.

1. High-performance germanium-seeded laterally crystallized TFTs for vertical device integration

2. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

3. Reaction of thin Ni films with Ge: Phase formation and texture

4. Metal-contact-induced crystallization of semiconductors

5. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films

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