Transient enhanced diffusion of boron in Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1471941
Reference106 articles.
1. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
2. Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena
3. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
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5. Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si
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