Physical and electrical characterization of PAI implant energy’s impact on multi-Vt SoC device performance

Author:

Tian Ming,Chen Kun,Wang Chen,Sun Qingqing,Zhang David Wei

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. 5nm CMOS production technology platform featuring full-fledged EUV, and high mobility channel FinFETs with densest 0.021μm2 SRAM cells for mobile SoC and high performance computing applications;Yeap,2019

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3. Halo and LDD engineering for multiple VTH high performance analog CMOS devices;Guo;IEEE Trans. Semicond. Manuf.,2007

4. Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide;Delwail;Microelectron. Eng.,2022

5. Improved leakage current and device uniformity for sub-20nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact;Chou;Microelectron. Eng.,2017

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