Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact-Reference-Cited by-同舟云学术

Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact

Published:2017-06 Issue: Volume:178 Page:137-140
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chou Chuan-Pu,Chen Chin-Yu,Chen Kuen-Yi,Teng Shih-Chieh,Wu Yung-Hsien

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. A low thermal budget self-aligned Ti silicide technology using germanium implantation for thin-film SOI MOSFET's

2. Advanced CMOS devices: Challenges and implant solutions

3. Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications

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3. Atomistic modeling of laser-related phenomena;Laser Annealing Processes in Semiconductor Technology;2021

4. {001} loops in silicon unraveled;Acta Materialia;2019-03

5. Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate;Japanese Journal of Applied Physics;2018-06-20