Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si-Reference-Cited by-同舟云学术

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Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si

Published:1990-02-01 Issue:2 Volume:137 Page:667-671
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Fair Richard B.¹²

Affiliation:

1. Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709

2. Department of Electrical Engineering, Duke University, Durham, North Carolina 27706

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086528/pdf

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