Author:
Cowern Nicholas,Rafferty Conor
Abstract
Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Cited by
37 articles.
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