Formation, evolution and annihilation of interstitial clusters in ion implanted Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
2. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
3. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
4. Transient Phosphorus Diffusion Below the Amorphization Threshold
5. Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si
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