Studies of the interactions between (311) defects and type I and II dislocation loops in Si+ implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Transient enhanced diffusion of phosphorus in silicon
3. The diffusivity of silicon self-interstitials
4. Extended Defects from Ion Implantation and Annealing, Rapid Thermal Processing: Science and Technology;Jones,1993
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