Time dependent modeling of single particle displacement damage in silicon devices

Author:

Tang Du,Martin-Bragado Ignacio,He Chaohui,Zang Hang,Xiong Cen,Li Yonghong,Guo Daxi,Zhang Peng,Zhang Jinxin

Funder

National Natural Science Foundation of China

Key Program of the National Natural Science Foundation of China

State Key Laboratory Program

Spanish Government Ramón y Cajal Fellowship

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference71 articles.

1. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology;Virmontois;IEEE Trans. Nucl. Sci.,2011

2. Similarities between proton and neutron induced dark current distribution in CMOS image sensors;Virmontois;IEEE Trans. Nucl. Sci.,2012

3. Modeling approach for the prediction of transient and permanent degradations of image sensors in complex radiation environments;Raine;IEEE Trans. Nucl. Sci.,2013

4. Exploring the kinetics of formation and annealing of single particle displacement damage in microvolumes of silicon;Raine;IEEE Trans. Nucl. Sci.,2014

5. Status and open problems in modeling of as-implanted damage in silicon;Hobler;Mater. Sci. Semicond. Process.,2003

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