Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide-Reference-Cited by-同舟云学术

Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide

Published:2019-02 Issue: Volume:165 Page:587-602
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Su Qing^ORCID,Wang Tianyao^ORCID,Gigax Jonathan,Shao Lin^ORCID,Lanford William A.,Nastasi Michael,Li Liyi,Bhattarai Gyanendra,Paquette Michelle M.,King Sean W.

Funder

DoE Office of Nuclear Energy

Nuclear Energy Enabling Technologies

Nebraska Nanoscale Facility: National Nanotechnology Coordinated Infrastructure

Nebraska Center for Materials and Nanoscience

National Science Foundation

U.S. Department of Energy

Office of Nuclear Energy

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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