Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95909
Reference7 articles.
1. Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon
2. Effect of Si and SiO2thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si
3. Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon
4. The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon
5. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
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