Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94445
Reference9 articles.
1. Shrinkage and growth of oxidation stacking faults during thermal nitridation of silicon and oxidized silicon
2. Defects in silicon substrates
3. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
4. Nitridation of Silicon and Oxidized‐Silicon
5. Growth kinetics of oxidation‐induced stacking faults in silicon: A new concept
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