The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C
Author:
Funder
Semiconductor Research Corporation (US)
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s10853-015-9475-1.pdf
Reference18 articles.
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3. Mogi TK, Thompson MO, Gossmann H-J, Poate JM, Luftman HS (1996) Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices. Appl Phys Lett 69(9):1273–1275
4. Fahey PM, Griffin PB, Plummer JD (1989) Point defects and dopant diffusion in silicon. Rev Mod Phys 61(2):289–384
5. Ural A, Griffin PB, Plummer JD (1999) Self-diffusion in silicon: similarity between the properties of native point defects. Phys Rev Lett 83(17):3454–3457
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