Growth kinetics of oxidation‐induced stacking faults in silicon: A new concept
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92526
Reference11 articles.
1. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
2. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
3. Kinetics of growth of the oxidation stacking faults
4. Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) Silicon
5. Anomalous temperature effect of oxidation stacking faults in silicon
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