Kinetics of growth of the oxidation stacking faults
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325984
Reference21 articles.
1. Oxidation induced stacking faults inn‐ andp‐type (100) silicon
2. Role of point defects in the growth of the oxidation-induced stacking faults in silicon
3. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
4. Anomalous temperature effect of oxidation stacking faults in silicon
5. Growth of Lattice Defects in Silicon during Oxidation
Cited by 101 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stacking Faults Inducing Oxygen Anion Activities in Li2MnO3;Advanced Materials;2023-04-21
2. Effect of interface on oxidation behavior and tribological properties of CrAlN/SiNx multilayer films;Ceramics International;2023-01
3. Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient;ECS Journal of Solid State Science and Technology;2019
4. Formation of thermal defects in silicon grown by means of float zone melting;Journal of Communications Technology and Electronics;2017-09
5. Microstructure and morphology of interfacial intermetallic compound CoSn3 in Sn–Pb/Co–P solder joints;Microelectronics Reliability;2015-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3