Investigation of the impact of amorphous silicon layers deposited by PECVD and HDP-CVD on oxide precipitation in silicon-Reference-Cited by-同舟云学术

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Investigation of the impact of amorphous silicon layers deposited by PECVD and HDP-CVD on oxide precipitation in silicon

Published:2023-09 Issue: Volume:164 Page:107614
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kissinger Gudrun^ORCID,Kot Dawid,Bärwolf Florian,Lisker Marco

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Mechanism of oxygen precipitation: some quantitative aspects;Tan,1994

2. Silicon material properties for VLSI circuitry;Lawrence,1982

3. Oxygen effect on electronic device performance;Tsuya,1994

4. Impact of Defects in Silicon Substrate on Flash Memory Characteristics

5. Oxygen precipitation in silicon;Kissinger,2015

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