Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112857
Reference21 articles.
1. Si ultrashallowp+njunctions using low‐energy boron implantation
2. Very shallowp+‐njunction formation by low‐energy BF+2ion implantation into crystalline and germanium preamorphized silicon
3. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
4. Formation of Shallow Boron‐Doped Layer for Channel Doping Using Preamorphization
5. Shallowp+junction formation by a reverse‐type dopant preamorphization scheme
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