Author:
Bousetta A.,van den Berg J. A.,Armour D. G.,Zalm P. C.
Subject
Physics and Astronomy (miscellaneous)
Cited by
37 articles.
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1. Modeling Two Dimensional Solid Phase Epitaxial Growth for Patterned Ge Substrates;ECS Transactions;2013-03-15
2. Silicon Device Processing;Materials Science and Technology;2013-02-15
3. Substrate orientation dependence on the solid phase epitaxial growth rate of Ge;Journal of Applied Physics;2013-01-21
4. Formation and characterizations of ultra-shallow p+–n junctions using B10H14 ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
5. Depth profiles of cluster-ion-implanted BSi in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05