Incorporation of accelerated low‐energy (50–500 eV) In+ions in Si(100) films during growth by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342565
Reference21 articles.
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4. Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction
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