Author:
Chen Jiashu,Li Mingyuan,Peng Yuanchao,Li Junhua,Xiao Xinyu,Shi Mengchao,Yang Jiaofen,Peng Ping,Liu Fei,Xiao Jing,Tao Ming,Liu Jie
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference47 articles.
1. MeV ion processing applications for industry;Asher;Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms,1994
2. Ion Implantation Science and Technology;Ziegler,2012
3. Incorporation of accelerated low‐energy (50–500 eV) In+ ions in Si (100) films during growth by molecular‐beam epitaxy;Hasan;J. Appl. Phys.,1989
4. Efficient molecular dynamics scheme for the calculation of dopant profiles due to ion implantation;Beardmore;Phys. Rev.,1998
5. Application of molecular dynamics for low-energy ion implantation in crystalline silicon;Chan;J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures,2006
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献