Depth profiles of cluster-ion-implanted BSi in silicon

Author:

Liang Jenq-Horng,Chiang Shiaw-Lung,Chen Chin-Tsai,Niu Huan,Tseng Mao-Sheng

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Sputtering of coinage metals with bismuth cluster ions: Experiment and computer simulation;Vacuum;2023-07

2. Small Al cluster ion implantation into Si and 4H‐SiC;Rapid Communications in Mass Spectrometry;2019-08-06

3. Single-Ion Implantation in Diamond with a High Lateral Resolution;Comprehensive Hard Materials;2014

4. Post-annealing effects on the shallow-junction characteristics caused by high-fluence 77keV BSi molecular ion implantations at room and liquid nitrogen temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-12

5. Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08

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