Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon-Reference-Cited by-同舟云学术

Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

Published:2007-08 Issue:1-2 Volume:261 Page:651-655
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.,Wang S.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

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3. W.-K. Chu, J. Liu, J. Jin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerators in Research and Industry, Denton, Texas, USA, 1–4 November 2000, p. 891.

4. Depth profiles of cluster-ion-implanted BSi in silicon

5. Characterization of BSi molecular ion implantation

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