Post-annealing effects on the shallow-junction characteristics caused by high-fluence 77keV BSi molecular ion implantations at room and liquid nitrogen temperatures

Author:

Liang J.H.,Wang S.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference27 articles.

1. Ion Implantation;Ryssel,1986

2. P. Ling, M.D. Strathman, C.H. Ling, B. Doyle, D. Walsh, L. Larson, J. Bonnett, S. Felch, in: Proceedings of the 1998 International Conference on Ion Implantation Technology, Kyoto, Japan, 22–26 June 1998, p. 1175.

3. W.-K. Chu, J. Liu, J. Jin, X. Liu, L. Shao, Q. Li, P. Ling, in: Proceedings of the Sixteenth International Conference on Application of Accelerators in Research and Industry, Denton, Texas, USA, 1–4 November, 2000, p. 891.

4. Depth profiles of cluster-ion-implanted BSi in silicon

5. Characterization of BSi molecular ion implantation

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