Author:
Peiching Ling ,Strathman M.D.,Chih Hsiang Ling
Cited by
4 articles.
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1. Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-08
2. Damage characteristics of low-temperature BSi molecular ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
3. Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
4. Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-08